Low frequency noise of ZnO based metal-semiconductor field-effect transistors

Compact Model of Low-Frequency Noise in Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors

The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. However, device variability creates challenges at each technology node which decreases yield, performance, and noise margins [1]. At these device dimensions the low-frequency noise (LFN) is dominated by ...

High-frequency noise in nanoscale metal oxide semiconductor field effect transistors

The noise characteristics of today’s short-channel devices are shown to have a better resemblance to ballistic devices than to long-channel metal oxide semiconductor field effect transistors MOSFETs . Therefore the noise characteristics of these devices are best modeled using a ballistic-MOSFET-based noise model. Extensive hydrodynamic device simulations are presented in support of this hypothe...

Low Frequency Noise in Junction Field Effect Transistors

-Low frequency noise in four-terminal JFETs has been measured as a function of substrate (second gate) bias with temperature and drain current as additional variables. Sharp peaks of noise have been observed at some values of gate bias. The mechanism of low frequency noise caused by Schockley-Read-Hall (SRH) centres and the significance of charge capture processes in and near the channel are di...

Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors

In this paper, electrical characteristics of nanoscale single-, double-, and all-around-gate silicon-0n-insulator (SOI) devices are computational investigated by using a quantum mechanical simulation. Considering several important properties, such as on/off current ratio, drain induced channel barrier height lowering, threshold voltage roll off, and subthreshold swing, geometry aspect ratio is ...

Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors